Friday, September 11, 2015
Toshiba has added four GaN-on-Si LEDS to its TL1L4 series which provide a high luminous flux and are suited to applications ranging from street and stadium lighting to LED light bulbs and down lighting for use in the home. imageAll offer a colour rendering index of Ra70 min. and a typical forward voltage of 2.8V.
Like the existing members of the TL1L4 series, GaN-on-Si technology has been used to create LEDs optimised for both output and energy efficiency.
However, the new 4A5B type improves upon these existing products by providing a luminous flux of 140lm (min at 85°C) compared to 130lm (min).
The products make it possible to meet the market demands for improved lighting fixture efficacy by achieving efficacies of over 110lm/W in a finished luminaire – with Toshiba assuming 90% driver efficiency, 90% optical efficiency, and junctions at 85°C.
Measuring 3.5 x 3.5mm, with a lens-top, the LEDs offer differing correlated colour temperatures (CCTs), with the TL1L4-DW0 providing 6,500K, the TL1L4-NT0 providing 5,700K, the TL1L4-NW0 5,000K and the TL1L4-WH0 4,000K.
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