Scientists announce tests using atom-thick graphene and 5nm-thick memristors to provide media with many times the storage density of Nand flash and possible fuzzy logic computing.

Stanford University scientists have published research following experiments with the one-atom-thick nanomaterial, graphene.

Three recent experiments at the US university have shown graphene to have 10 times more capacity than silicon-based memory, with a fraction of the footprint and power consumption.

LGraphene was originally isolated a decade ago but, until now, has had relatively few practical applications. It is a purified relative of pencil lead and is formed when carbon atoms link together into sheets one-atom thick. Graphene is stronger than steel, as conductive as copper and has thermal properties useful in nanoscale electronics.

The graphene-based memory technologies work by applying jolts of electricity to the material to switch between conductive and non-conductive states.

Stanford professors HS Philip Wong and Eric Pop led an international group of collaborators who describe three graphene-centric memory technologies in separate articles in Nature Communications, Nano Letters and Applied Physics Letters.

“Graphene is the star of this research,” said Pop, a contributor to two of the three memory projects. “With these new storage technologies, it would be conceivable to design a smartphone that could store 10 times as much data, using less battery power, than the memory we use today.”

Wong said: “Data storage has become a significant, large-scale consumer of electricity, and new solid-state memory technologies such as these could also transform cloud computing.”

By: DocMemory
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