LAPIS Semiconductor, a ROHM Group company, has unveiled a 128Mbyte NOR Flash memory aimed at data storage in automotive and industrial systems.

The MR29V12852B claims to be the industry's first NOR Flash memory to incorporate error correcting code circuit and output drivability adjustment circuits that prevent radiation noise on the board. In addition, compatibility with competitor products makes it easy to implement data error countermeasures by simply replacing existing memory without requiring system modifications, reducing costs while ensuring stable operation.

Until now, integrating bit error correction functionality involved adding an error correcting code circuit and parity memory to conventional memory. However, the MR29V12852B incorporates an error correcting code circuit and parity Flash memory that provide bit error correction functionality. This eliminates the need for additional components, while compatibility with existing NOR Flash memory makes replacement easy without requiring system modification.

The MR29V12852B includes an output drivability adjustment circuit that changes the current drive capability during data output in order to reduce radiation noise on the board during NOR Flash operation and improve waveform characteristics of the read data output through impedance matching. This makes it possible to optimise current driving capability based on system configuration, requiring fewer components for radiation noise countermeasure and reducing the number of damping resistors along with installation costs.

Applications of the device include automotive systems, industrial equipment and general consumer electronics. Samples of the device have started shipping while mass production is expected by November 2016.

By: DocMemory
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