Monday, June 20, 2016
SK hynix plans to launch more energy efficient, next-generation dynamic random-access memory or DRAM chip solutions into the market in the second half of this year.
The chipmaker unveiled the plan at a meeting with suppliers held in Shenzhen, China, on June 16.
The new solution, called low power double data rate 4 X or LPDDR4X, boasts 20 percent higher energy efficiency compared to the current LPDDR4.
Samsung Electronics, the global No. 1 memory chip maker, had already announced that it developed the LPDDR4X in March at the Mobile World Congress.
Industry watchers say the more energy efficient LPDDR4X could hit the market next year.
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