SK Hynix announced on August 17 that it unveiled new memory semiconductor solutions for mobile devices and data servers at the Intel Developer Forum (IDF) 2016 held at the Moscone West Convention Center for three days from the 16th in San Francisco, the U.S.

The IDF is an annual conference of the chip industry to share and discuss the latest IT information and products with developers and partners, being participated in by 200 companies, such as Dell, Ericsson, Lenovo, Samsung and Cisco, and about 6,000 developers.

At the forum this year, SK Hynix unveiled the Universal Flash Storage (UFS) 2.1 memory chip for mobile devices and the Non Volatile DIMM (NVDIMM) for data servers.

The UFS 2.1 memory chip, based on the second-generation 3D NAND flash memory and controller technologies, comes in a wide range of storage capacities including 32, 64 and 128 gigabytes. It provides more than three times faster sequential read performance compared to that of the existing embedded Multi Media Card (eMMC) 5.1, reading and writing sequentially at 800 megabytes and 200 megabytes per second, respectively. SK Hynix recently started to mass produce the product for mobile devices.

The 16 GB DDR4 NVDIMM can process data at the high speeds and in a safe manner. By combining the DRAM and NAND flash, which has twice as much capacity as DRAM, in one module, the NVDIMM does not lose data when the power is off and processes data in a much faster and safer manner, compared to the existing storage technology for data servers. SK Hynix will start mass producing the product by the end of the year.

The company plans to continue to release industry-leading products, built on DRAM and NAND flash technologies, and focus on strengthening the market competitiveness and the relationship with customers in the future in order to lead the rapidly changing semiconductor market.

By: DocMemory
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