Weebit Nano has announced that it will be partnering with Leti, the French microelectronics research institute, to develop an advanced memory technology that is expected to replace flash memory.

ReRAM technology (advanced resistive random-access memory) is based on silicon oxide (SiOx) and the partners said that they will be looking to develop SiOx ReRAM memory that is scalable to 40nm, which could open up significant opportunities in what is a multi-billion-dollar memory market and one in which the dominant technology, flash memory, is approaching its scaling limits.

Weebit Nano is an Israeli flash memory company and its core technology has shown the potential to be able to deliver a 1,000x faster and a 1,000x more energy-efficient memory than flash and which is also cheaper.

The flash market was estimated at $35billion in 2015 and is expected to grow exponentially over the next five years.

According to Weebit it will benefit from Leti’s expertise and experience in emerging memory and ReRAM, and will have access to advanced facilities of Leti, including an 8,500 square metres semiconductor cleanroom area.

ReRAM is expected to replace flash in mass storage environments such as cloud data centres and solid-state drives. However it is also expected to replace it in a whole range of diverse consumer-related fields like wearable devices.

By: DocMemory
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