Infineon is introducing its 800V CoolMOS P7 series of 800V MosFETs based on superjunction technology.

The family of 800 V CoolMOS P7 MOSFETs will be available in twelve R DS(on) classes and in six packages to fully address the needs of target applications.

Products with R DS(on) of 280 mÙ, 450 mÙ, 1400 mÙ and 4500 mÙ can be ordered now.

The family is for low power SMPS applications, mainly focussing on flyback topologies which are typically found in applications like adapter, LED lighting, audio, industrial and auxiliary power.

The 800 V CoolMOS P7 series offers up to 0.6% efficiency gain which translates into 2 to 8 °C lower MOSFET temperature compared to the CoolMOS C3 or to competitor parts tested in typical flyback applications.

This new benchmark results from a combination of optimized device parameters: including the reduction of more than 50% in E oss and Q g, as well as a reduced C iss and C oss.

The improved performance enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, this helps customers to save BOM costs and reduce assembly efforts.

The integrated Zener Diode significantly improves ESD ruggedness, thus reducing ESD related production yield losses.

The MOSFET is easy to drive and to design-in due to its V (GS)th of 3 V and the smallest V GS(th) variation of only ±0.5 V which allows for lower driving voltage and lower switching losses.

By: DocMemory
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