Weebit Nano, the ReRAM start-up, has transferred its SiOx ReRAM from Rice University’s facilities in Houston, Texas, to Leti’s pre-industrialisation facility in Grenoble, France.

Weebit Nano was founded in 2014 to develop a memory technology invented by Professor James Tour of Rice University with the potential to be 1000 times faster, more reliable, more energy-efficient and cheaper than flash. Initial SiOx experiments at Leti’s pre-industrialisation facility confirm that Weebit’s nano-porous SiOx process is reproducible.

The next step is the development of a 1,000 bit array, followed by the development of a 1-million-bit array, which Weebit expects will demonstrate the ability to produce memory components for mass-storage applications. Leti is expected to release a detailed report on the development process and optimisation of the technology in Q1 2017.

The report will outline plans to continue the development of the SiOx technology towards the creation of a 40nm ReRAM cell, which is expected in late 2017.

Weebit believes that achieving this milestone will open discussions with leading players in the semiconductor industry and pave the way towards commercialisation.

Once commercialised, Weebit’s technology will enable devices such as smartphones to have capacities of more than 1 terabyte (TB). The aim is to replace Flash. Weebit Nano re-listed on the Australian Stock Exchange in August after completing its reverse takeover of iron ore company Radar Iron and raising A$5.04 million in a capital raise.

The money Is going towards R&D and fabrication of the Weebit technology, sales and marketing, business development, and expenses associated with the acquisition of Radar Iron.

The company’s executives are based in Tel Aviv, Israel, as are its internal R&D team.

David Perlmutter, formerly of Intel, is Chairman of Weebit.

By: DocMemory
Copyright © 2023 CST, Inc. All Rights Reserved