Yangtze River Storage Technology has said it is committed to developing 3D NAND flash memory technology, but has not disclosed a schedule for volume production.

Rumors circulated previously Yangtze River Storage would produce China's first homegrown 3D NAND flash memory at the end of 2017.

Simon Yang, CEO for both Yangtze River Storage and Wuhan Xinxin Semiconductor Manufacturing (XMC), disclosed Yangtze River Storage is engaged in the development of 32-layer 3D NAND flash chips and expects to narrow its technological gap with international memory vendors in 2019.

Yangtze River Storage is looking to transition to the world's leading memory firms, in terms of technology, by 2020, according to Yang.

Yangtze River Storage recently broke ground on a new memory semiconductor fabrication plant located in the Donghu New Technology Development Zone, Wuhan (Hebei province, China). Three 3D NAND flash production lines will be set up at the plant with volume production slated to kick off in 2018. The plant is looking to produce 300,000 12-inch wafers monthly by 2020.

By: DocMemory
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