According to the Economic Daily News, TSMC will be offering embedded MRAM in 2018 and embedded RRAM in 2019.

Both technologies will be for the 22nm finfet process node.

Last month Samsung announced that foundry customers can have embedded MRAM in their 28nm FD-SOI SoCs.

NXP is the first customer.

Samsung’s MRAM is said to be 1000 times faster than NAND with unlimited endurance.

Samsung says that embedding MRAM only takes four mask-steps, compared to 20 masks for embedded flash, and occupies a third of the silicon real estate taken by SRAM.

By: DocMemory
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