Samsung Electronics Co. said Wednesday it started the mass production of dynamic random access memory (DRAM) chips through its second-generation 10-nanometer-level process.

The South Korean tech giant said it is producing 8-gigabit DDR4 chips using 10-nanometer class technology, which marks another breakthrough after Samsung adopted the first-generation technology in February 2016.

Compared to the first-generation process, Samsung said the productivity has expanded 30 percent, which will help the company meet soaring demand for DRAM chips from global clients.

The world's No. 1 chipmaker said the second-generation 10-nanometer-level DRAM chips are 10 percent faster than the first-generation product and consume 15 percent less power.

Samsung said the new DRAM chips have doubled the capacity, speed and power efficiency of the 4 Gb DDR3 chips produced by the 20-nanometer process in 2012.

The company said by expanding the production of the 10-nanometer-level DRAMs, it plans to further strengthen the overall competitiveness. The company added it will be applying the new process to produce more premium products for its partners.

Samsung said it plans to tap deeper into the market for server, mobile and graphic chips by utilizing its latest achievement.

By: DocMemory
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