Yiming Zhu has resigned as CEO for GigaDevice Semiconductor recently, and has been appointed as CEO for Innotron Memory (previously known as Hefei ChangXin or Hefei RuiLi).

David NK Wang handed over his CEO role at Innotron to Zhu, which industry observers reckon marks the completion of Wang's mission. Under Wang's leadership, Innotron completed construction of the phase-one facility of its 12-inch wafer fab in January 2018 followed by equipment move-in.

Wang said during a public event in April that Innotron expects to roll out its 8Gb DDR4 engineering samples at the end of 2018 and 8Gb LPDDR4 products in the third quarter of 2019. Wang also disclosed Innotron's production capacity will reach 20,000 wafers monthly at the end of 2019, and the company's plans to construct the phase-two facility of its 12-inch wafer plant in 2020.

Innotron also expects to complete its 17nm process technology R&D in 2021, according to Wang.

With Innotron entering its next stage of development, Zhu will lead the company to carry out its R&D and production goals. Zhu founded GigaDevice, a fast-growing China-based company specializing in the design and development of NOR and NAND flash devices.

In October 2017, GigaDevice and Innotron struck a deal to jointly develop 19nm DRAM process technology. The pair is scheduled to complete the development and trial run of the 19nm process technology with a yield rate of 90% by the end of 2018,

The collaboration between GigaDevice and Innotron is based on a five-year cooperation agreement GigaDevice signed with government-owned Hefei Industry Investment Group (HIIG), which wholly owns Innotron.

By: DocMemory
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