Samsung Electronics said it has begun mass production of the first 512GB embedded Universal Flash Storage (eUFS) device.

The devices is compliant with version 3.0 of the Universal Flash Storage from the Jedec standards organization and delivers twice the speed of the previous-generation eUFS 2.1 spec to allow smartphone users to enjoy seamless experiences in future smartphones with ultra-large high-resolution screens, Samsung (Seoul) said.

The eUFS 3.0 matches the performance of today’s ultra-slim notebooks, according to the company.

Samsung said the 512GB eUFS 3.0 device stacks eight of its fifth-generation 512Gb V-NAND die and integrates a high-performance controller. At 2,100MB/s, the new eUFS doubles the sequential read rate of Samsung’s latest eUFS 2.1 memory, which was announced in January. The new device's read speed is four times faster than that of a SATA solid state drive (SSDs) and 20 times faster than a typical microSD card, Samsung said.

Samsung said the new memory’s random read and write speeds provide up to a 36% increase over the eUFS 2.1 specification, at 63,000 and 68,000 Input/Output Operations Per Second (IOPS), respectively. The sequential write speed has been improved by 50% to 410MB/s — equivalent to that of a SATA SSD, Samsung said.

Cheol Choi, executive vice president of memory sales and marketing at Samsung, said in a press statement that Samsung plans to offer a 1TB eUFS device later this year.

Samsung noted that it was the first company to begin product of UFS interfaces with eUFS 2.0 in January 2015. At the time, it was 1.4 times faster than the mobile memory standard at that time, eMMC 5.1.

By: DocMemory
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