Specialty DRAM and flash memory chipmaker Winbond Electronics on July 22 held a beam-raising ceremony for its new 12-inch wafer plant in Kaohsiung, southern Taiwan. The new facility is on track to have Winbond's in-house developed 20nm process technology ready for commercial production by 2021.

Winbond is scheduled to start installing equipment at the new plant in July 2020. Construction of the first phase of the plant is set to complete by the end of 2020 followed by volume production in 2021.

Winbond disclosed previously that the first-phase facility is designed for approximately 27,000 wafers in monthly output.

Winbond's new 12-inch plant will move directly to 20nm chip production, company chairman Arthur Chiao was quoted as saying in previous reports. Winbond is also considering installing production lines for NAND flash products at the new facility, according to Chiao.

Winbond broke ground for the new 12-inch plant in Kaohsiung in October 2018. Winbond already has one 12-inch plant in Taichung, central Taiwan.

Winbond entered volume production of DRAM chips manufactured using 25nm process technology in the fourth quarter of 2018. The 25nm process is the second generation of Winbond's in-house developed process technology for the manufacture of DRAM memory. Winbond is gearing up for transition to a newer 20nm process,

By: DocMemory
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