Monday, September 23, 2019
China's DRAM startup ChangXin Memory Technologies (CXMT) will operate as an IDM and start volume production of 8GbDDR4 and LPDDR4 by the end of 2019 as scheduled, according to Ping Rxuan, the firm's vice president and chief of its future technology evaluation labs.
Ping, speaking at the China Flash Market Summit held September 19 in Shenzhen, said that IDM has proved the best business model for DRAM firms following decades of the industry's development, and therefore CXMT has been embracing such a model since its inception in 2016.
CXMT will kick off commercial production of DDR4 DRAM using sub-20nm process by the end of 2019, Ping said.
He also disclosed that his company will also move to cooperate with related partners on developing EUV, HKMG (High-k Metal Gate) and GAA (gate all around) process technologies as well as new materials and new production architectures for DRAM production to meet diverse needs in the big data era.
Ping continued that DRAM production has seen two major architectures, with the trench architecture featuring capacitors under the gate, compared to capacitors above the gate for the stack architecture.
But Qimonda came up with a new production concept of "buried word line," allowing more condensed lineup for circuitry and more gross dies on the same piece of wafer than stack DRAM technology. He said the new concept has gained application momentum in DRAM production.
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