Samsung Electronics, SK Hynix and Micron Technology have all developed their respective 1z-nanometer process technology for the manufacture of DRAM memory, targeting datacenter and other high-end device applications.

SK Hynix announced recently the development of 1znm 16Gb DDR4 DRAM, with mass production scheduled to kick off in 2020.

Micron in August 2019 noted it is already engaged in risk production of DRAM chips built using 1znm process technology at its Hiroshima fab in Japan. Micron initiated its transition to 1znm process technology with mass production of its 16Gb DDR4 memory solution, said the company, adding that the more advanced manufacturing node will be ready for mass production at one of Micron's Taiwan-based plants in the first half of 2020.

Micron noted previously it would focus on technology transitions during fiscal year 2019, with its DRAM fabs in Taiwan set to transition to more-advanced 1y/1znm process technologies. At its factory site in Taichung, central Taiwan, Micron is gearing up for transition to the newer 1znm node with mass production scheduled for 2020 and beyond.

Earlier in 2019, Samsung claimed it had developed the industry's first 1znm 8Gb DDR4 DRAM. Mass production of the 1znm 8Gb DDR4 will kick off in the second half of 2019 to accommodate next-generation enterprise servers and high-end PCs to be launched in 2020, the company said.

In addition, Samsung has already been engaged in the development of enhanced 1znm process technology incorporating extreme ultraviolet (EUV) lithography technology, previous reports quoted industry sources as saying. SK Hynix and Micron are still evaluating when they will switch to EUV-based process technologies due to the high cost of related equipment.

Market observers believe 1znm DRAM manufacturing yield rates will not be stable and mature until the second half of 2020.

By: DocMemory
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