Friday, February 21, 2020
ST and TSMC are collaborating to accelerate the development of GaN process technology and to bring discrete and integrated GaN devices to market.
ST’s GaN products will be manufactured using TSMC’s GaN process technology.
GaN’s benefits include greater energy efficiency at higher power, leading to a substantial reduction in parasitic power losses.
GaN technology also allows the design of more compact devices for better form factors.
Additionally, GaN-based devices switch at speeds as much as 10X faster than silicon-based devices while operating at higher peak temperatures.
These material characteristics make GaN suitable for broad-based adoption in evolving automotive, industrial, telecom, and specific consumer applications across both the 100V and the 650V clusters.
Specifically, Power GaN and GaN IC technology-based products will enable ST to provide solutions for medium and high-power applications with better efficiency compared to silicon technologies on the same topologies, including automotive converters and chargers for hybrid and electric vehicles.
Power GaN and GaN IC technologies will help accelerate the megatrend of the electrification of consumer and commercial vehicles.
“As a leader in both wide bandgap semiconductor technology and in power semiconductors for the demanding automotive and industrial markets, ST sees significant opportunity in accelerating the development and delivery of GaN process technology and bringing power GaN and GaN IC products to the market. TSMC is a trusted foundry partner that can uniquely meet the challenging reliability and roadmap evolution requirements of ST’s target customers,” says ST’s Marco Monti (pictured), “this cooperation complements our existing activities on power GaN undertaken at our site in Tours, France and with CEA-Leti. GaN represents the next major innovation in Power and Smart Power electronics, as well in process technology”.
ST expects the delivery of first samples of power GaN discrete devices to its key customers later this year, followed by GaN IC products within a few months.
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