Friday, February 28, 2020
“The stand-alone emerging NVM market will grow to over $4 billion in 2025”, says Yole’s Simone Bertolazzi, “it will be driven by two key segments: low-latency storage (enterprise and client drives) and persistent memory (NVDIMMs).”
The embedded emerging NVM market grew 118% CAGR between 2019 and 2025, and will reach more than $2 billion by 2025.
Phase Change Memory (PCM) dubbed 3D XPoint by Intel and sold by Intel under the brand name Optane, will be the leading technology thanks to the sales of 3DXPoint products – particularly NVDIMMs – which are sold by Intel in a bundle with its server CPUs.
The storage-class memory market is projected to reach billion-dollar revenue within the next few years and Optane is key to this with Intel saying saying that there are currently more than 200 ongoing proof-of-concepts based on Optane DIMMs, and that the conversion rate from proof-of-concept to deployment has exceeded 80%.
In 2019, Everspin entered pilot production of 1Gb STT-MRAM parts at GlobalFoundries (28nm). In the coming years, STT-MRAM market penetration will continue through the adoption of 1Gb chips in special drives.
So far, RRAM has been commercialised mainly by Adesto with low-density CBRAMTM products for EEPROM replacement.
The highest RRAM density today is 8Mb (Fujitsu-Panasonic), but progress is expected with 100Gb-class chips for low-latency storage products by an IDM player are anticipated for 2020/2021.
In parallel, the embedded emerging memory market segment will be driven by MCUs and IoT, as well as memory buffers for ASIC products (i.e. AI accelerators, display drivers, and CMOS image sensors).
Among the embedded emerging NVM technologies, MRAM has advanced at a relatively faster pace thanks to the strong involvement of IDM/foundries and the support of equipment suppliers which have been providing new solutions to difficult technical challenges.
In March 2019 Samsung announced the mass production of embedded MRAM for applications in MCUs, Internet-of-Things (IoT) applications, and memory buffers.
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