Globalfoundries is offering eMRAM on 22nm FD-SOI. The company is working with several clients with multiple production tape-outs scheduled in 2020.

The technology shows the scalability of eMRAM as a cost-effective option at advanced process nodes for IoT, general-purpose MCU, automotive, edge-AI and other low-power applications.

Designed as a replacement for high-volume embedded NOR flash (eFlash), GLoFo’s eMRAM allows designers to extend their existing IoT and microcontroller unit architectures to access the power and density benefits of technology nodes below 28nm.

GLoFo’s eMRAM is a highly versatile and robust eNVM that has passed five rigorous real-world solder reflow tests, and has demonstrated 100,000-cycle endurance and 10-year data retention across the -40°C to 125°C temperature range.

The FD-SOI eMRAM process supports AEC-Q100 quality grade 2 designs, with development in process to support an AEC-Q100 quality grade 1 solution next year.

Custom design kits featuring drop-in, silicon validated MRAM macros ranging from 4 to 48 mega-bits, along with the option of MRAM built-in-self-test support is available today from GLoFo and its design partners.

eMRAM is a scalable feature that is expected to be available on both FinFET and future FD-SOI platforms as a part of the company’s eNVM roadmap.

GloFo’s 300mm line at Fab 1 in Dresden, Germany, will run eMRAM on 22FD-SOI.

By: DocMemory
Copyright © 2023 CST, Inc. All Rights Reserved