Taiwan's Industrial Technology Research Institute (ITRI) has been engaged in the development of next-generation non-volatile memory technologies, such as ferroelectric RAM (FRAM) and spin-orbit torque magnetic random-access memory (SOT-MRAM), for more than 10 years, and has transferred the technologies to Taiwan's domestic chipmakers including fabless firms, according to the government-sponsored R&D institution.

The technology transfer is meant to assist Taiwan's chipmaking industry in making progress in the development for AI-enable IoT products, said ITRI. FRAM enables low-power consumption for IoT and portable electronics devices, while MRAM provides a strong performance advantage for applications such as self-driving vehicles and data centers.

ITRI's SOT-MRAM technology, in particular, achieves not only high speeds but also high stability, thanks to the memory's three-terminal structure enabling different paths for reading and writing operations. ITRI has established a platform for its SOT-MRAM technology certification and trial runs on 8-inch wafers.

By: DocMemory
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