Nexperia has announced that the first products to be made in the company’s new 8-inch wafer line in Manchester, UK, will be low RDS(on), low Qrr 80 V and 100 V MOSFETs using its latest NextPower silicon technology.

The new production line will expand Nexperia’s capacity with immediate effect, and the new PSMN3R9-100YSF (100 V) and PSMN3R5-80YSF (80 V) devices will feature the industry’s lowest Qrr Figure of Merit (RDS(on) x Qrr).

Commenting on the announcement Mike Becker, Nexperia’s product manager, said, “With the global shortage of semiconductors, the investments made by Nexperia to increase capacity across its global manufacturing sites, including Manchester & the Philippines where these MOSFETs are produced, will be very welcome news to buyers. Designers will also be excited by the performance of the new MOSFETs. They are very well suited to many switching applications, and are genuine second source options to other vendors’ products.”

The NextPower 80 V and 100 V silicon MOSFETs significantly improve RDS(on) from 7 m? for previous generation 100 V parts down to just 4.3 m? for the new devices, resulting in increased efficiency. The NextPower technology also delivers best-in-class low Qrr of 44 nC for the 100 V part which reduces spiking and EMI emissions. Overall, the Qrr Figure of Merit for the 100 V part is 61% lower on average than competitive devices.

The 80 V and 100 V MOSFETs are available in Nexperia’s thermally and electrically high performance LFPAK56E copper clip technology package. Devices are suitable for a wide range of switching applications including AC/DC, DC/DC and motor control.

By: DocMemory
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