Infineon Technologies has announced a high-density radiation-tolerant (RadTol) NOR Flash memory product that's qualified to MIL-PRF-38535’s QML-V flow (QML-V Equivalent).

The QML-V flow is the highest quality and reliability standard certification for aerospace-grade ICs.

Both the 256 Mb and 512 Mb RadTol NOR Flash non-volatile memories are a low-pin count, single-chip solution for applications such as FPGA configuration, image storage, microcontroller data and boot code storage.

When used at higher clock rates, the data transfer supported by the devices is able to match or exceed traditional parallel asynchronous NOR Flash memories while reducing pin count. The devices are radiation-tolerant up to 30 krad (Si) biased and 125 krad (Si) unbiased. At 125°C, the devices are able to support 1,000 Program/Erase cycles and 30 years of data retention and at 85°C 10k Program/Erase cycles with 250 years of data retention.

Infineon said that it had leveraged the 65 nm floating gate Flash process technology to develop the RadTol 256 Mb quad-SPI (QSPI) and 512 Mb dual quad-SPI NOR Flash. Both are featuring 133 MHz SDR interface speed.

The 512 Mb device comprises two independent 256 Mb die that fit side by side in a single package solution which provides flexibility for designers to operate the device in dual QSPI or single QSPI mode on either die independently, offering an option to use the second die as a backup solution.

Infineon said that it was collaborating closely with leading FPGA ecosystem companies such as Xilinx on space-grade applications.

By: DocMemory
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