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GlobalFoundries announced a US$117 million agreement with DoD


Friday, May 6, 2022

GlobalFoundries has announced a US$117 million agreement with the US Department of Defense (DoD) to provide a strategic supply of US-made semiconductors that are critical to national security systems. Securely manufactured at GF's Fab 8 in Malta, New York, the chips will be used in some of the nation's most sensitive defense and aerospace applications.

The first chips from the agreement are targeted to begin delivery in 2023, GF said.

Building upon the longstanding partnership between the DoD and GF, the new agreement provides the DoD with a supply of semiconductor chips manufactured on GF's differentiated 45nm SOI platform. Under the agreement, the manufacturing of these chips will be transferred to GF's Fab 8 from GF's Fab 10 in East Fishkill, New York. In addition to providing continuity of supply for the DoD, this technology transfer to Fab 8 will enable GF to continue offering its 45nm SOI platform to commercial customers after GF's Fab 10 transitions to ON Semiconductor as previously announced in April 2019.

GF employs nearly 3,000 people at Fab 8 and has invested more than US$15 billion in the facility. GF's Fab 8 is in compliance with both US International Traffic in Arms Regulations (ITAR) and highly restrictive Export Control Classification Numbers under the Export Administration Regulations (EAR). GF is working with the US government to secure classified status for Fab 8.

GF's experience with ITAR and EAR regulations, in addition to the secure manufacturing being done at Fab 8 and the classified manufacturing taking place at Fab 9 in Vermont and Fab 10, are key to the GF Shield Program and GF's embracing its role as the nation's most secure and trusted semiconductor manufacturer, the foundry claimed. The GF Shield program extends to GF commercial customers across all sectors a level of key safeguarding and protection principles modeled on those GF uses to manufacture semiconductors for government entities.

By: DocMemory
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