SK hynix has successfully applied breakthrough solution dubbed HKMG, a thin High-K metal gate, to replace existing gate oxide to enhance reliability and scaling-up in transistors on DRAM chipsets for mobile devices for higher performance at low power setting.

The world’s second largest DRAM supplier announced Wednesday it has began mass-producing LPDDR5X (low-power double data rate 5X) based on the HKMG (High-K metal gate) technology.

HKMG remains the most significant innovation in logic transistor technology, allowing further scaling to be achieved without degrading reliability or causing current leakage by replacing the SiON gate oxide material in the gate of transistor in DRAM memory with a thin high-k film, the company explained.

Its next-generation mobile DRAM is designed to boost speed, capacity, and power savings for future 5G applications, which are in strong demand.

The HKMG-based DRAM for mobile devices relying on power efficiency can bolster speed in low power setting.

The chipmaker has started mass production of the LPDDR5X DRAM with data processing speeds of up to 8.5 gigabits per second, 33 percent faster than the previous version. In addition, the new device operates in the ultra-low voltage range of 1.01V ~ 1.12V set by the Joint Electron Device Engineering Council (JEDEC). As a result, it saves power by 25 percent, which means a longer use time per full charge.

SK has recently launched a 16-gigabit package composed of various LPDDR5X chips with data processing speeds of 68 gigabits per second. As demand for high-performing DRAM for mobile applications increases, LPDDR5X will likely go into wider use, the company said.

SK hynix shares rose 0.80 percent to 88,400 won ($64.92) in the early trading of Wednesday.

By: DocMemory
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