The TPH9R00CQ5 has been specifically designed for use in high performance switching power supplies such as those used in communication base stations as well as other industrial applications.

With a maximum VDSS rating of 150V and current handling (ID) of 64A, the new device comes with a very low drain-source On-resistance (RDS(ON)) of just 9.0mO (max). This is a reduction of more than 40% versus previous generation product TPH1500CNH1.

In high performance power solutions that use synchronous rectification, reverse recovery performance is important. Due to inclusion of a high-speed body diode, the TPH9R00CQ5 reduces the reverse recovery charge (Qrr) by around 74% (to 34nC typ.) when compared to an existing device such as the TPH9R00CQH. Additionally, the reverse recovery time (trr) of just 40ns is an improvement of over 40% compared with earlier devices.

Along with a low gate charge (Qg) of just 44nC, these improvements contribute to reduced losses and increased power density in high performance, efficient power solutions. A channel temperature of 175ºC (max) is significant for MOSFETs with high-speed diode and will offer the designer increased thermal headroom.

This device also reduces spike voltages created during switching, thereby improving EMI characteristics of designs, and reducing the need for filtering. It is housed in a versatile, surface-mount SOP Advance(N) package measuring just 4.9mm x 6.1mm x 1.0mm.

To support designers, Toshiba has developed a G0 SPICE model for rapid verification of the circuit function as well as highly accurate G2 SPICE models, for accurate reproduction of transient characteristics.

Further design support is available in the form of advanced reference designs, now available from Toshiba’s website. These include a 1kW non-isolated buck-boost DC-DC converter, a 3-phase multi-level MOSFET-based inverter and a 1kW full bridge DC-DC converter – all of which use the new TPH9R00CQ5.

By: DocMemory
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