Diodes has introduced silicon carbide mosfet rated at 1,200V and 37A for industrial motor drives, solar inverters and electric vehicle battery chargers.

Diodes SiC mosfet DMWS120H100SM4

Dubbed DMWS120H100SM4, its packages transfers heat at 0.6°C/W “making it well-suited for applications running in harsh environments”, according to the company,

Rds(on) is typically 80m? (Vg=15V, 100m?max) and gate charge is typically 52nC (-4/+15Vg, 800Vd, 20Ad).

Its 37A maximum capacity is at 25°C, which drops to 23.5A at 100°C.

Packaging is TO247-4, allowing the fourth (source-connected) pin to be used to improve gate drive fidelity.

By: DocMemory
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