Navitas Semiconductor’s 650V Merged-PiN Schottky (MPS) diodes, its fifth generation of high-speed GeneSiC silicon carbide (SiC) devices, integrate a unique PiN-Schottky structure to deliver ‘low-built-in voltage-biasing’ for the highest efficiency across all load conditions. Applications include PFC in server/telecom power supplies, industrial motor drives, solar inverters, LCD/LED TVs, and lighting.

The novel GeneSiC MPS design combines the best features of both PiN and Schottky diode structures, producing the lowest forward-voltage (VF) drop of only 1.3V, high surge-current capability (IFSM), and minimized temperature-independent switching losses. Proprietary thin-chip technology further reduces VF and improves thermal dissipation for cooler operation. These GeneSiC diodes are being offered in a low-profile surface mount QFN package for the first time.

To ensure reliable operation in critical applications, the diodes offer best-in-class robustness and ruggedness, with high surge-current and avalanche capability, with 100% avalanche (UIL) production testing. The devices are rated at 4A to 24A and comes in an array of surface-mount (QFN, D2-PAK) and through-hole (TO-220, TO-247) packaging.

The GExxMPS06x-series MPS diodes cover applications ranging from 300W to 3kW and diverse circuits such as solar panel boost converters, and continuous-current mode power factor correction (PFC) in gaming consoles. With a ‘common-cathode’ configuration, the TO-247-3 package offers great flexibility for high power-density and bill-of-material reduction in interleaved PFC topologies.

By: DocMemory
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