Magnachip Semiconductor Corp. has begun mass production of its new 40V MXT metal oxide semiconductor field effect transistor (MOSFET) for automotive energy recovery systems. The device is used in the automobile of a global automaker.

An automotive energy recovery system stores a vehicle’s kinetic energy while braking and uses the recovered energy for functions such as air conditioning or audio systems afterwards. Therefore, this feature improves fuel economy and reduces emissions.

Built on a Power Dual Flat No-lead (PDFN) 56 package with enhanced design of the core cells and terminations, the AEC-Q101 qualified 40V MXT MOSFET (AMDU040N014VRH) offers RDS(on) as low as 1.4mO to enhance the efficiency of kinetic energy recovery. In addition, a guaranteed operating junction temperature up to 175°C and a high level of avalanche ruggedness increase the power density and efficiency of the energy recovery system.

With the application of the PDFN56 package, the size of this new MOSFET was reduced by approximately 80%, as compared to other 40V MOSFET products designed with a Decawatt Package (DPAK). As a PDFN56 package is widely used in the automotive sector, the new product is well-suited for various applications such as reverse voltage protection circuits and brushless direct current motors of internal combustion engines and regenerative braking systems of electric vehicles.

By: DocMemory
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