Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) a designer, developer, and global supplier of a broad range of power semiconductors, power ICs, and digital power products, today announced its new industry-leading 650V and 750V SiC MOSFET platform for both industrial and automotive applications. The 650V SiC MOSFETs are ideal switching solutions for industrial applications such as solar inverters, motor drives, industrial power supplies, and new energy storage systems, while the AEC-Q101 qualified 750V SiC MOSFET line is targeted for the high-reliability needs in electric vehicle (EV) systems such as the on-board charger (OBC) and the main traction inverter.

2 – Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) a designer, developer, and global supplier of a broad range of power semiconductors, power ICs, and digital power products, today announced its new industry-leading 650V and 750V SiC MOSFET platform for both industrial and automotive applications. The 650V SiC MOSFETs are ideal switching solutions for industrial applications such as solar inverters, motor drives, industrial power supplies, and new energy storage systems, while the AEC-Q101 qualified 750V SiC MOSFET line is targeted for the high-reliability needs in electric vehicle (EV) systems such as the on-board charger (OBC) and the main traction inverter.

The new AOM015V75X2Q 750V aSiC MOSFET expands on the existing second-generation 1200V aSiC MOSFET and diode products with an industry-leading low RDS(ON) down to 15m? in a standard TO-247-4L package while maintaining a recommended +15V gate drive voltage to ensure the broadest compatibility with existing gate driver solutions. Due to the minimized internal gate resistance and optimized cell design, AOS designed these devices to exhibit ultra-fast switching speeds that are fully controllable with an external gate resistor. This benefit is also noticeable in standard switching figuresof-merit (FoM) such as RON x QGD and RON x QRR that are improved compared to existing 750V SiC MOSFET solutions.

Highlighting the advantages of these new aSiC MOSFETs is the breakthrough performance increase in short circuit withstand time (SCWT) for planar SiC MOSFETs. For many applications, and especially in EV inverters, a longer SCWT can greatly improve the system’s ruggedness and give developers more flexibility in design. In order to achieve an increase in SCWT, it is typically necessary to also significantly increase the die size of the product, which can impact overall system costs. In AOS tests, these new 750V MOSFETs have maintained a similar or lower RON x A while demonstrating a greater than 40% increase in SCWT when compared to similarly-sized competitive products.

“We are very excited to follow up on our successful 1200V aSiC MOSFETs with these automotive-grade 650V and 750V products. Our industrial, renewable energy, and xEV customers will now have a complete portfolio available to select the right solution that supports their wide range of product power levels at an even higher performance and efficiency level,” said David Sheridan, Vice President of SiC products at AOS.

Technical Highlights:

• 650V aSiC MOSFETs are qualified for industrial use

• 750V aSiC MOSFETs are AEC-Q101 Qualified for xEV applications and PPAP capable

• RDS,ON available down to 15m?

• Low Qrr and robust body diode

• Maximum operating junction temperature to 175°C

By: DocMemory
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