SK hynix has just announced it's planning to develop a 4F2 (square) DRAM, joining South Korean rival Samsung and its journey into the world of 3D DRAM.

The cost of EUV (extreme lithography) processes has continued to skyrocket since the commercialization of 1c DRAM, with SK hynix researcher Seo Jae Wook noted during an industry conference in Seoul, South Korea, on Monday.

Having the cell array this way is capable of reducing the die surface area by 30% compared to 6F2 DRAM, with sources telling The Elec that Samsung and SK hynix are aiming to use 4F2 with DRAM in the 10nm node and under. SK hynix's Seo said that with VG or 3D DRAM, the process can be designed to reduce the cost of EUV processes by half, which is a huge deal.

By: DocMemory
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