GaN specialist Finwave Semiconductor and GlobalFoundries are to qualify Finwave’s GaN-on-Si enhancement-mode (E-mode) MISHEMT technology on GloFo’s 80RFGaN process with the aim of running mass production wafers in H1 2926.

Finwave claims that its technology delivers excellent gain and efficiency at sub-5V voltages, while ensuring high uniformity across 200mm wafers.

Running its wafers on GloFo’s 90RFGaN process will deliver power amplifiers for applications where traditional GaAs and Si technologies fall short, says Finwave, including new higher frequency 5G FR2/FR3 bands, 6G and mmWave amplifiers, and high-power Wi-Fi 7 systems, where superior range and efficiency are critical.

“This partnership opens the door to further integration of RF Front-Ends onto a single GaN-on-Si device,” says Finwave CEO Pierre-Yves Lesaicherre, “this has never been done before, and has the potential to reduce cost and size, both of which are at a premium in cellphones.”

“As next-generation wireless networks require devices that operate at higher frequencies, Finwave’s low-voltage GaN-on-Si technology combined with GF’s 90RFGaN platform will become a vital part of power amplifiers in future mobile phones,” says GloFo vp Shankaran Janardhanan.

Finwave’s E-mode MISHEMT technology, developed over more than a decade of research and innovation, has been supported by federal funding from the U.S. Department of Energy Advanced Research Projects Agency-Energy (ARPA-E) through its Seeding Critical Advances for Leading Energy technologies with Untapped Potential (SCALEUP) program, as well as private investments from deep-tech investors and strategic partners.

By: DocMemory
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