SK Hynix announced on Nov. 21 that it has started mass production of the world's highest 321-layer 1-terabit (Tb) Triple-Level Cell (TLC) 4D NAND flash. This milestone positions SK Hynix as the first company in the NAND flash industry to begin mass production of products with over 300 layers, marking a significant technological advancement.

The journey to this achievement began in June last year when SK Hynix started mass production of the previous generation's highest 238-layer NAND. The company then showcased the development progress of the 321-layer product at the Flash Memory Summit (FMS) in the United States in August of the same year, where it also exhibited samples for the first time. This progression highlights SK Hynix's commitment to pushing the boundaries of NAND flash technology.

NAND flash memory, a type of non-volatile storage technology, is widely used in various electronic devices, including smartphones, tablets, USB drives, and solid-state drives (SSDs). The number of layers in NAND flash memory refers to the vertical stacking of memory cells, with more layers typically indicating higher storage density and capacity. The 321-layer NAND flash represents a significant leap from previous generations, such as the 238-layer NAND.

The new 321-layer product boasts several improvements over its predecessor. The data transfer speed has increased by 12%, the read performance has improved by 13%, and the power efficiency of data reading has risen by more than 10%. These enhancements are crucial for meeting the growing demands of high-performance and high-capacity memory in applications such as artificial intelligence (AI) and data centers.

SK Hynix introduced the "3-Plug" process technology to overcome stacking limitations during the development of the 321-layer product. This innovative approach involves conducting the plug process in three stages, followed by optimized subsequent processes to electrically connect the three plugs. Additionally, SK Hynix developed a low-deformation material to reduce deformation by changing the material filled inside the plug and introduced automatic alignment correction technology between plugs.

Moreover, SK Hynix applied the development platform of the previous generation 238-layer NAND to the 321-layer, minimizing process changes and improving productivity by 59% compared to the previous generation. As a result, the data transfer speed of the 321-layer product improved by 12%, and read performance improved by 13% compared to the previous generation. The power efficiency of data reading also increased by more than 10%.

Choi Jung-dal, Vice President of SK Hynix, emphasized the strategic importance of this achievement, stating, "SK Hynix has gained a favorable position in targeting the AI storage market, including SSDs for AI data centers and on-device AI, by being the first to begin mass production of NAND with over 300 layers." He further added, "We will leap forward as an AI memory provider with a perfect portfolio of ultra-high-performance memory, including DRAM represented by High Bandwidth Memory (HBM) as well as NAND."

The introduction of the 321-layer NAND flash memory has significant implications for various markets, including consumer electronics, enterprise storage, and emerging technologies like AI. The demand for high-performance and high-capacity memory is driven by the growth of AI and data centers, which require fast and efficient data processing. SK Hynix's advancements in NAND flash memory are crucial for supporting these technologies.

Looking ahead, SK Hynix plans to supply 321-layer products to customers starting from the first half of next year. The company also aims to expand the application range of new low-power, high-performance markets for AI based on the 321-layer NAND. This strategic move is expected to solidify SK Hynix's position as a leader in the semiconductor industry and drive further innovation in memory technology.

By: DocMemory
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