ROHM and TSMC have entered a strategic partnership on development and volume production of GaN power devices for electric vehicle applications.

The partnership will integrate ROHM’s device development technology with TSMC’s GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.

GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies.

TSMC supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).

ROHM and TSMC hook up for GaN

The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM’s EcoGaN series, including the 45W AC adapter (fast charger) “C4 Duo” produced by Innergie, a brand of Delta Electronics.,

“By providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry,” says ROHM’s Katsumi Azuma.

“By combining TSMC’s expertise in semiconductor manufacturing with ROHM’s proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs,” says TSMC’s Chien-Hsin Lee.

By: DocMemory
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