Micron Technology Inc. has launched what it claims is the industry’s highest-density, radiation-tolerant single-layer cell (SLC) NAND flash.

The first in a planned series of flash products, the initial NAND device has a die capacity of 256 gigabits (Gb). Future space-qualified products will include NAND, NOR and DRAM solutions, Micron said.

Micron said it developed this NAND flash product due to the rise in commercial and government missions that allow for processing data directly in orbit. This will help AI-enabled edge computing in space operations such as:

* Allow spacecraft to analyze sensor data

* Detect anomalies

* Make decisions autonomously

* Reduce reliance on Earth-based systems

* Preserve bandwidth

“Micron’s radiation-tolerant memory is essential for storing and processing data as we push the boundaries of computing in space,” said Kris Baxter, corporate vice president and general manager of Micron’s Automotive and Embedded Business Unit. “As AI expands in space operations — from autonomous navigation to real-time analysis — Micron is increasing our focus on delivering solutions that enable the resilience and intelligence needed for next-gen aerospace missions.”

Why rad-tolerance is important

The challenges in space are numerous, specifically on technology that is exposed to these harsh conditions on a continual basis. These conditions include:

* Extreme temperatures

* Shock and vibration

* Vacuum pressure

* Radiation exposure

Micron’s NAND flash was tested in alignment with NASA’s PEM-INST-001 Level 2 flow, which subjects components to yearlong screening like extreme temperature cycling, defect inspections and 590 hours of dynamic burn-in to enable spaceflight reliability.

Additionally, the NAND was tested for total ionizing dose (TID) aligning with the U.S. military standard MIL-STD-883 TM1019 condition D. This measures the cumulative amount of gamma radiation that a product can absorb in a standard operating environment in orbit and remain functional. This helps to determine mission life cycles.

Finally, the NAND flash was tested for single event effects (SEE) aligning with the American Society for Testing Materials flow ASTM F1192 and the JEDEC standard JESD57. This testing evaluates the impact of high-energy particles on semiconductors and verifies safe and reliable operation in harsh radiation environments. The goal is to reduce the risk of mission failure of the electronic components.

Already in use

According to Micron, the company’s memory is currently in use in Mercury Systems’ solid-state data recorders (SSDR) that are aboard NASA’s Earth Surface Mineral Dust Source Investigation (EMIT). The SSDRs are equipment that capture and store scientific and engineering data for missions.

In the EMIT project, the SSDRs gather data on the world’s arid regions, mapping the composition of mineral dust to better understand the effects on the Earth and the human population. EMIT has also been useful in studying water resources, rare Earth elements and agriculture.

“Modern space systems are capturing higher volumes of more complex data, demanding solutions that provide vastly more capacity in compact packages — all while operating reliably in space’s high-radiation environment for many years,” said Vincent Pribble, principal product manager at Mercury Systems. “At the heart of Mercury’s data recorders, Micron’s flash memory has proven to be highly reliable in orbit — helping us enable groundbreaking missions and scientific research that is expanding our understanding of our planet and beyond.”

By: DocMemory
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