Intel has successfully completed acceptance testing on the first second-generation High Numerical Aperture (High-NA) extreme ultraviolet (EUV) lithography system, marking a significant step in its advanced semiconductor manufacturing plans.

The system, known as TWINSCAN EXE:5200B, was developed by Dutch equipment maker ASML and represents a major upgrade from the earlier EXE:5000 model, which was primarily used for research and development.

According to Intel, the new platform is geared towards high-volume production, offering improved performance metrics including a throughput of 175 wafers per hour and overlay accuracy of 0.7 nanometres.

ASML has incorporated several enhancements into the EXE:5200B, such as a higher-power EUV light source to enable faster wafer exposure and a redesigned wafer stocker architecture aimed at maintaining consistent throughput, particularly for complex multipass or multiexposure processes.

Industry leaders view High-NA EUV technology as critical for future chip manufacturing. ASML Chief Executive Christophe Fouquet has indicated that high-volume production using these systems is expected to begin between 2027 and 2028, with ongoing collaboration with customers through 2026 to ensure operational reliability.

Fouquet told Bloomberg that Intel and other clients are currently testing the machines, which are anticipated to support chips designed for advanced artificial intelligence applications. He noted that imaging quality and resolution have shown strong results, and efforts are now focused on refining system maturity.

Looking ahead, ASML plans to introduce an even more advanced platform, dubbed Hyper NA, in the next decade, with research already underway.

By: DocMemory
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