“TSMC’s 2nm (N2) technology has started volume production in 4Q25 as planned,” says a notice on TSMC’s web-site, “N2 technology features first-generation nanosheet transistor technology, with full-node strides in performance and power consumption.”

”TSMC also developed low-resistance redistribution layer (RDL) and super high-performance metal-insulator-metal (MiM) capacitors to further boost performance.’, adds the notice.

“TSMC N2 technology will be the most advanced IMG_1511-1-150x150.webptechnology in the semiconductor industry in terms of both density and energy efficiency,” continues the statement, “N2 technology, with leading nanosheet transistor structure, will deliver full-node performance and power benefits to address the increasing need for energy-efficient computing.”

”With our strategy for continuous enhancements, N2 and its derivatives will further extend TSMC technology leadership well into the future,” concludes the notice.

N2 is designed to deliver a 10%–15% performance gain at the same power, a 25%–30% reduction in power at the same performance, and a 15% increase in transistor density compared to N3E for mixed designs that include logic, analog, and SRAM. For logic-only designs, transistor density is up to 20% higher than N3E.

By: DocMemory
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