Alpha & Omega Semiconductor (AOS) has introduced its aMOS E2 600 V Super Junction MOSFET platform, the first device in the AOTL037V60DE2 family. The platform is intended to deliver high efficiency, high power density, and durability in applications such as mid- to high-power switched-mode power supplies and solar inverter systems.

aMOS E2 600V Super Junction MOSFET The AOTL037V60DE2 is a 600 V N-channel super junction MOSFET fabricated on AOS’ latest aMOS E2 high-voltage process. It has a maximum drain-to-source on-resistance of 37 mO at VGS=10 V, a typical value of 33 mO, and a temperature coefficient of 0.52 V/°C. At the device level, the MOSFET supports a pulsed drain current of up to 280 A and a continuous drain current of 70 A at a case temperature of 25°C, with a maximum junction temperature of 150°C.

A notable feature of the aMOS E2 platform is the robustness of its body diode. Specifically, AOS engineered the body diode to withstand reverse recovery current slew rates of 1300 A/µs at a junction temperature of 150°C under 80 A forward current. The diode also features a typical forward voltage of 0.95 V at 20 A and a reverse recovery charge of 1.2 µC.

According to the datasheet, switching behavior includes a total gate charge of 146 nC at VGS=10 V and VDS=480 V, with a gate-drain charge of 80 nC. Typical turn-on delay and rise times are 52 ns and 102 ns, respectively, while turn-off delay and fall times are specified at 200 ns and 56 ns.

Finally, the device is tested for unclamped inductive switching and gate resistance. It supports a single-pulse avalanche energy of up to 750 mJ and a repetitive avalanche energy rating of 50 mJ.

Super Junction MOSFETs for 600 V Designs Super junction MOSFETs achieve low on-resistance at high breakdown voltages by replacing the uniformly doped drift region of conventional MOSFETs with alternating p- and n-type pillars. This charge-balanced structure reduces drift resistance while sustaining high electric fields. As a result, designers can lower conduction losses without resorting to larger die sizes.

However, the super junction structure introduces trade-offs. The body diode formed by the p-body and n-drift regions can store significant charge during conduction. When reverse-biased, this stored charge must be removed, leading to reverse recovery current that can stress the MOSFET and the surrounding circuitry. In high-power systems operating under hard commutation, reverse recovery characteristics significantly influence reliability margins.

To measure the ruggedness of SJ MOSFETs, engineers assess avalanche energy capability and short-circuit withstand time. These metrics describe how the MOSFET responds when subjected to energy beyond normal operating limits.

Avalanche events occur when a MOSFET blocks an inductive load without a defined clamp, forcing the device to absorb energy internally. Short-circuit withstand time measures how long a device can survive a fault before thermal runaway or secondary breakdown occurs.

Improvements in these areas allow designers to relax external protection requirements or tolerate transient conditions that would otherwise cause failure.

Device Availability The AOTL037V60DE2 is currently available in production quantities with a reported lead time of approximately 16 weeks.

By: DocMemory
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