Friday, November 8, 2002
Texas Instruments Inc. said today that it has selected ferroelectric RAM (FRAM) over other embedded memory options for use as its next-generation non-volatile memory technology.
TI said it has produced a 64Mbit FRAM using a standard 0.13-micron CMOS process in its R&D fab here. Dennis Buss, vice president of research and development for TI, said the chip demonstrates that FRAM provides better cost and a lower-power alternative to other potential next-generation non-volatile memories such as magnetic RAM (MRAM) or Ovonyx Unified Memory.
TI's FRAM technology was developed over the past 18 months as part of a development agreement with Ramtron International Inc., Colorado Springs, Colo., a long-time developer of FRAM technology.
Embedded FRAM will be used in TI products such as its OMAP wireless handset platform beginning in 2005, Buss said.
TI will sell FRAM only as an embedded memory, he said. Ramtron is expected to offer the devices on a merchant basis.
By: DocMemory
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