Wednesday, November 13, 2002
Infineon Technologies and Nanya Technology have inked a long expected agreement to a joint-venture for the production of DRAMs.
The two companies also said they have set aside $1.1 billion to build a giant wafer fab in Taiwan to start production late 2003.
The two companies have also agreed to develop together process technology down to the 70-nanometer process node.
The move is in-line with Infineon's strategy of partnering with Taiwanese companies aspiring to get into the DRAM business so that it can share its costs of production and particularly of fab building.
Now Infineon has aligned itself strongly with Nanya and the two companies are to develop 90-nm and 70-nm DRAM production technologies for 300-mm wafers together, and create a 50:50 joint venture for the production of DRAM chips in a new joint 300-mm facility in Taiwan.
Initial production of the first 300-mm wafers in the new facility is expected in late 2003, Infineon said.
By: DocMemory
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