Wednesday, January 22, 2003
With Intel, VIA, SiS and other major chipmakers launching DDR333MHz-supporting chipsets, TwinMOS Technologies, a leading manufacturer of memory modules, announces the DDR333MHz CL2 Unbuffered DIMM module to meet the demand for more powerful and stable DDR products.
The memory module is compatible with all DDR333MHz platforms and includes CL2 (CAS Latency 2) capabilities, which shorten the column address strobe latency and make browsing through multimedia content a more enjoyable experience for gaming enthusiasts, enterprises and home users.
CAS (Column Address Strobe) latency is the time needed by the CPU to prepare to read data stored in the DRAM. CL2 denotes two system clocks and CL3 denotes three. The less time the CPU needs to read the data, the more powerful the system is. Tests have shown the 333MHz CL2 module is more powerful than most of the CL2.5 modules.
The DDR333MHz CL2 module is made of 6-layer PCB, 30u electroplated edge connectors and other components that are strictly inspected and directly shipped from the brand manufacturers. As for IC design, TwinMOS follows the JEDEC standard to prevent signal interference. Such design allows optimal stability while the system is performing high-speed computing tasks and guarantees safety needed for the storage of large-quantity data. TwinMOS provides lifetime warranties.
By: DocMemory
Copyright © 2023 CST, Inc. All Rights Reserved
|
