Thursday, February 13, 2003
Toshiba Corp. on Wednesday said that a joint development project with Infineon Technologies AG had created a 32Mbit ferroelectric RAM, claimed to be the highest density FRAM yet reported.
The development was reported by Toshiba at the International Solid State Circuits Conference in San Francisco.
The FRAM chip uses a new "chain cell structure" that links together eight memory cells. Each cell has a ferroelectric capacitor and field effect transistor in parallel, not in series, which is the traditional FRAM cell structure.
The 32Mbit FRAM is made on 0.2-micron processing, which provides a 1.875 square micron cell size on a 96mm2 die. Toshiba claimed this is half the die size of other FRAMs with the same size cell. Similarly, the controller area of the chip is 35% of the total die size, which Toshiba said is also the smallest proportion of any FRAM.
By: DocMemory
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