Monday, February 17, 2003
Toshiba reportedly said it is making deals to sell flash memory chips based on M-Systems Flash Disk Pioneers Ltd.'s flash memory capacity-doubling technology as well as work with Infineon Technologies AG on a new flash technology.
Toshiba will make 512M-bit memory chips based on M-Systems' Mobile DiskOnChip G3 technology, which allows each memory cell to hold double amount of data.
The advantage of the new technology are energy and space savings. The chip draws 10 microamps compared to around 100 microamps for a regular flash memory chip. The smaller chip also helps drive smaller and more compact electronics products, Toshiba said.
On the other hand, Toshiba said it and Germany's Infineon have successfully developed a 32M-bit ferroelectric RAM (FeRAM) chip.
The companies consider FeRAM to be a possible replacement for flash and SRAM memory used in mobile devices, because it offers attractive features of each type of memory. It can hold data in memory even when the power is disconnected, just as flash memory can, and also works at the higher speeds offered by SRAM or DRAM, said the two companies.
By: DocMemory
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