Monday, February 24, 2003
Silicon Integrated Systems Corp. (SiS), Samsung Electronics Co., Ltd. (Samsung), ASUSTeK Computer Inc. (ASUS) and Rambus Inc. have announced the cooperative development of the next-generation RDRAM-based chipset, the SiSR659, which is targeted at the performance computing and multimedia gaming markets.
The R659 chipset represents the second offering from SiS's family of RDRAM products. The R659 chipset drives four channels of 1200MHz RDRAM memory resulting in 9.6GByte/sec of memory bandwidth. This represents a 50% higher performance gain than competing dual-channel DDR chipsets, they said. The chipset also includes architectural enhancements for higher performance through faster response time, as well as up to 16GByte of total memory capacity, the companies claimed.
The chipset uses standard commodity RIMM modules available today. This latest RDRAM solution from SiS pairs the SiSR659 with the SiS964 south bridge, which integrates USB 2.0 with up to 8 ports and Serial ATA features.
Sample delivery of the SiSR659 is scheduled for the third quarter of 2003.
By: DocMemory
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