Hynix Semiconductor Inc. said it had started volume production of 512Mbit DDR and DDR2 at 0.10-micron process technology. A 1Gbit DDR2 chip will be made on the 0.10-micron process starting in the second half of 2003, the company said.

Earlier Hynix said its 0.10-micron process would be used to make 512Mbit NAND flash chip late this year as part of the joint production agreement with ST Microelectronics for the data content nonvolatile memory.

Hynix said it is using existing lithography and production tools to produce the 0.10-micron node chips at lower cost. Hynix claimed that 20% of the firm's chip production by the end of the year will be at the 0.10-micron node.

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