Thursday, June 12, 2003
Toshiba Corp. and Sandisk Corp. Wednesday said the flash memory partners have developed a new high density NAND memory cell structure capable of fabricating chips up to 4Gbits in density.
The new NAND cell structure can be used in 2Gbit single-level cells (SLC) with an 0.041-micron square area per bit, as well as 4Gbit multilevel cells (MLC) with 0.0205-micron square area per bit.
Toshiba and SanDisk will produce the new NAND memory chips using 90nm processing at the joint venture FlashVision fab in Yokkaichi, Japan. Initial production is slated in the first half of 2004.
The new NAND cell has a floating gate that is self-aligned to the active area. The companies said this design allows scaling beyond the 90nm node for future generation NAND chips. They said the ability to scale to greater NAND densities becomes difficult with current cell design at 0.11-micron processing.
Details of the new flash development were given at the VLSI Symposium in Kyoto, Japan.
By: DocMemory
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