The MCP is targeted at the 3G wireless handset market in an effort to deliver high resolution video and gaming features in a small form factor and with low power consumption.

Ivan Greenberg, director of strategic marketing for Samsung Semiconductor Inc., the San Jose, Calif.-based subsidiary of Samsung, said the MCP affords cell phone users 3G capability without having to compromise handset power or size.

According to Samsung, each pin of the Mobile DDR can transmit data up to 200Mbits/s, which the company said is twice as fast as SDRAMs used in cellular phones today. Samsung said that equates to a mobile phone transmission rate of up to 400Mbytes/s.

The Mobile DDR technology also enabled Samsung to eliminate the delay locked loop (DLL) and voltage reference function which further reduced power consumption. The chip has an internal temperature-compensated self-refresh circuit to automatically adjust the self-refresh cycle as the temperature changes. This increases the time the cellular phone can be used on a single battery charge, according to Samsung.

The two NAND flash memory chips can store more than an hour of full motion video at VGA resolution, Samsung said. The NAND memory is also used for bootup, eliminating the need for NOR flash in the handset. Samsung has been promoting NAND flash in a variety of applications to replace NOR for code execution.

The Mobile DDR and NAND memory chips operate at 1.8V. MCP, which is sampling now, supports deep power-down mode, programmable driver strength, and partial array/self-refresh in mobile phones.

By: DocMemory
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