Infineon designed several key functional building blocks for high-speed communications, based on its SiGe:C bipolar technology. The process enables a device with cut-off frequencies of more than 200-GHz and ring-oscillator gate delay times of 3.7-ps.

The SiGe process from Infineon is said to have 10-to-30 percent higher operating frequencies compared to competing circuits and will enable new applications in communications systems. Devices and products benefiting from these research results are discrete components, radio-frequency chips, and wireline chips with speeds up to 40-gigabits-per-second.

Using its SiGe:C process technology, the researchers fabricated and demonstrated three record setting ICs: a 110GHz+ dynamic frequency divider, a 86-GHz static frequency divider, and a 95-GHz voltage controlled oscillator (VCO). Infineon also demonstrated that an integrated 77-GHz automotive radar transceiver in SiGe.

"These research results underline Infineon's commitment to be at the leading edge of technology developments, so that high performance devices will be provided for next generation customer products," said Werner Simbuerger, from the High-Frequency Circuits Research Department of Infineon, in a statement. "The development and fabrication of these 100GHz+ components enables our customers to design and create a new class of products for high speed communications applications."

By: DocMemory
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