Matsushita Electric Industrial today unveiled an embedded ferroelectric RAM using the 0.18-micron process technology.

Aimed at for system-on-a-chip (SoC) devices, the embedded FRAM was said by Matsushita to have greater memory capacity than conventional FRAM, which are typically manufactured using 0.35-micron processes.

A stacked cell configuration also reduces the memory cell size to one-tenth that of previous FRAMs, the company said. The device operates at 1.1V and uses lead-free SBT (strontium-bismuth-tantalate) for the on-chip ferroelectric capacitors to meet environmental concerns.

Samples of the embedded FRAM will be available in August. Target markets are mobile electronic devices and networking equipment