Tuesday, August 12, 2003
Hynix Semiconductor Inc. Monday announced development of a 1Gbit DDR2 memory, which the company will begin sampling in the fourth quarter.
Hynix said the chip will be in production in early 2004. The 1Gbit and an earlier announced 512Mbit DDR2 will be offered in a 68-ball or a 60/84-ball FBGA package.
Hynix said the next generation 1Gbit DDR2 chip will be produced on the company's 0.11-micron process, using existing stepper lithography tools. The Korean chipmaker said the 0.11-micron process technology will increase the number of die per wafer by 40% over the 0.13-micron process.
By: DocMemory
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