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Samsung announce 1Gb stacked BGA DRAM


Thursday, September 4, 2003 Samsung Electronics Co. Ltd. said Wednesday (Sept. 3) it has created a 1-Gbit Double Data Rate (DDR) synchronous DRAM chip-scale package (CSP) component consisting of two 512-Mbit DDR SDRAM die in a single package.

The chip is available in DDR 266 and DDR 333 versions and measures 11.5-millimeter by 12-millimeter. It meets the JEDEC DDR chip-scale package ball pitch specifications, Samsung said.

Samsung has been a leading developer of multichip packages. Samsung said a 2-Gbit DDR chip-scale package component could be made using two 1-Gbit DDR SDRAM die, but did not say if or when Samsung planned such a product.

By: DocMemory
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